- 您现在的位置：买卖IC网 > Sheet目录481 > MTP36N06V (ON Semiconductor)MOSFET N-CH 60V 32A TO-220AB
MTP36N06V
12
10
QT
30
25
1000
T J = 25 ° C
I D = 32 A
V DD = 30 V
8
Q1
Q2
V GS
20
100
V GS = 10 V
t r
t f
6
15
t d(off)
4
2
Q3
T J = 25 ° C
I D = 32 A
10
5
10
t d(on)
0
0
5
10
15
20
25
V DS
30
35
40
0
1
1
10
100
Q T , TOTAL CHARGE (nC)
Figure 8. Gate ? To ? Source and Drain ? To ? Source
Voltage versus Total Charge
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN ? TO ? SOURCE DIODE CHARACTERISTICS
32
T J = 25 ° C
V GS = 0 V
24
16
8
0
0.5 0.55
0.6 0.65
0.7 0.75
0.8 0.85 0.9
0.95
1
1.05
V SD , SOURCE?TO?DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain ? to ? source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T C ) of 25 ° C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal
Resistance ? General Data and Its Use.”
Switching between the off ? state and the on ? state may
traverse any load line provided neither rated peak current
(I DM ) nor rated voltage (V DSS ) is exceeded and the
transition time (t r ,t f ) do not exceed 10 μ s. In addition the total
power averaged over a complete switching cycle must not
exceed (T J(MAX) ? T C )/(R θ JC ).
A Power MOSFET designated E ? FET can be safely used
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non ? linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E ? FETs can withstand the stress of
drain ? to ? source avalanche at currents up to rated pulsed
current (I DM ), the energy rating is specified at rated
continuous current (I D ), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I D can safely be
assumed to equal the values indicated.
in switching circuits with unclamped inductive loads. For
http://onsemi.com
5
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MTP50P03HDL
MOSFET P-CH 30V 50A TO-220AB
MTPD1346-010
PIN DIODE 1300NM FLAT 2.8MM TO46
MTPD1346-030
PIN DIODE 1300NM FLAT 2.8MM TO46
MTPD1346-100
PIN DIODE 1300NM FLAT 2.8MM TO46
MTPS1065PT
VISIBLE RED POINT SOURCE EMITTER
MTPS1065WC
VISIBLE RED POINT SOURCE EMITTER
MTPS3085CP
EMITTER IR POINT SOURCE
MTPS3085MC
EMITTER IR POINT SOURCE
相关代理商/技术参数
MTP3H-E10
制造商: 功能描述: 制造商:undefined 功能描述:
MTP3H-E10C
制造商:Panduit Corp 功能描述:CABLE TIE MOUNT, NYLON 6.6; Mounting Hole Dia:5.21mm; Mount Fixing Type:Screw; Mount Material:Nylon 6.6; Mount Color:Natural; Accessory Type:Cable Tie Mount; Body Material:Nylon 6.6; Color:Natural; Features:3 Bundle Retaining Areas ;RoHS Compliant: Yes
MTP3H-E10-C
功能描述:电缆束带 Mutiple Tie Plate, 3 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度:
MTP3H-E10-C39
功能描述:电缆束带 Mutiple Tie Plate, 3 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度:
MTP3H-E6-C
功能描述:电缆束带 Mult Tie Plate, 3 Bundle, M-H Ties, #6 RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度:
MTP3N100E
制造商: 功能描述: 制造商:undefined 功能描述:
MTP3N12
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 3A I(D) | TO-220AB
MTP3N120E
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM